| عنوان فارسی مقاله: |
کاهش جریان نشتی در FET بدون پیوند تونلی با استفاده از منبع با ناخالصی کم |
| عنوان انگلیسی مقاله: | Leakage current reduction in junctionless tunnelFET using a lightly doped source |
چکیده
مقدمه
ساختار دستگاه و پارامترهای شبیه سازی
نتایج و مباحث
کلمات کلیدی :
Temperature effect on hetero structure junctionless tunnel FET ...iopscience.iop.org/article/10.1088/1674-4926/36/3/034002by SB Rahi - 2015 - Cited by 6 - Related articlesGhosh B and Akram M W 2013 Junctionless tunnel field effect transistor IEEE ... M Using low-k oxide for reduction of leakage current in double gate tunnel FET ...Leakage current reduction in junctionless tunnel FET using a lightly ...freepaper.us/?paperno=421158Translate this pageدریافت مقاله با ترجمه فارسی Springer-Verlag : Leakage current reduction in junctionless tunnel FET using a lightly doped source دانلود رایگان مقاله.Shibir Basak - Google Scholar Citationsscholar.google.com/citations?user=AJ5F_TwAAAAJ&hl=enJunctionless Tunnel Field Effect Transistor with Nonuniform Doping ... Leakage current reduction in junctionless tunnel FET using a lightly doped source.NPN Bipolar Action in Junctionless Nanowire TFET: Physical ... - arXivhttps://arxiv.org/pdf/1609.08150by M Rahimiana - 2016 - Related articlestransistor action in the source side of a junctionless nanowire tunneling FET (BJN-TFET). ... Owing to the sharp switching of the JN-TFET and high BJT current gain, the ...... Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser ... A. Orouji and M. Rahimian, “Leakage current reduction in nanoscale ...