عنوان فارسی مقاله: | یک ترانزیستور اثر میدان نانو نوار گرافنی جدید با دو عایق گیت (دریچه ای) مختلف |
عنوان انگلیسی مقاله: | A novel graphene nanoribbon field effect transistor with two different gate insulators |
چکیده
1. مقدمه
2. هندسه دستگاه
3. روش پیادهسازی
4. مدل دوبعدی
5. نتیجهگیری
کلمات کلیدی :
PDF]A novel graphene nanoribbon field effect transistor with two different ... iranarze.ir/wp-content/uploads/2016/10/5548-English.pdf A novel graphene nanoribbon field effect transistor with two different gate insulators. Maedeh Akbari Eshkalak a,n, Rahim Faez b, Saeed Haji-Nasiri a. a Novel Graphene Nano-Ribbon Field Effect Transistor with Schottky ... https://www.researchgate.net/.../260941895_a_Novel_Graphene_Nano-Ribbon_Field_E... In this paper, we propose a novel tunneling graphene nanoribbon field effect transistor by modification of the conventional structure in a way that its drain ... A novel graphene nanoribbon field effect transistor for ... - ResearchGate https://www.researchgate.net/.../261298189_A_novel_graphene_nanoribbon_field_effe... Jul 17, 2016 - In this work, we present a novel structure of Graphene NanoRibbon Field-Effect Transistor (GNR FET) to reduce short channel effects. Double gate graphene nanoribbon field effect transistor with ... link.springer.com/article/10.1007/s10825-015-0781-2 by A Naderi - 2016 - Cited by 3 - Related articles Dec 29, 2015 - In this paper a novel graphene nanoribbon transistor with electrically ... junctionElectric fieldGNRFETShort channel effectsTunneling current. A Novel Graphene Nano-Ribbon Field Effect Transistor with Schottky ... www.academia.edu/.../A_Novel_Graphene_Nano-Ribbon_Field_Effect_Transistor_wi... A Novel Graphene Nano-Ribbon Field Effect Transistor with Schottky Tunneling Drain and Ohmic Tunneling Source. Mohammad K Moravvej-Farshi. Author.