| عنوان فارسی مقاله: | محاسبات زیرباند خود سازگاری از AlGaN / GaN ناهمگونی های منفرد |
| عنوان انگلیسی مقاله: | Self-Consistent Subband Calculations of AlGaN/GaN Single Heterojunctions |
چکیده
I. مقدمه
II. قطبش پیزوالکتریک و خود به خودی
III. ساختار زیرباند
IV. نتیجه گیری
کلمات کلیدی :
AlGa - Springer Linklink.springer.com/content/pdf/10.1134%2F1.1900256.pdfthus, electron tunneling takes place between this accu- mulation layer and the two-dimensional subbands in the GaAs QW. The results of self-consistent calcula- tions of the probability density |ψ|2 for the electron ground state in the GaAs QW are also shown in Fig. 2; these calculations were carried out using a numerical.Hole subband states of GaAs/ Al x Ga 1 − x As quantum wells within ...https://www.researchgate.net/.../13314313_Hole_subband_states_of_GaAs_Al_x_Ga_1_...We present an exact solution for the hole subband dispersion of a [001] symmetric GaAs/AlxGa1-xAs quantum well within the 6×6 Luttinger model, which extends previous work by Andreani, Pasquarello, and Bassani, Phys. Rev. B 36, 5887 (1987) for the 4×4 case. We employ symmetry arguments to decouple the Kramers ...Investigation into the charge distribution and barrier profile tailoring in ...adsabs.harvard.edu/abs/2002JAP....91.4387Zby M Zervos - 2002 - Cited by 33 - Related articlesTitle: Investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self-consistent Poisson-Schrödinger calculations and capacitance-voltage profiling. Authors: Zervos, M.; Kostopoulos, A.; Constantinidis, G.; Kayambaki, M.; Georgakilas, A. Affiliation: AA(Microelectronics ...