| عنوان فارسی مقاله: |
طرح n-MOSFET به کمک گیت ساختگی برای یک مدار ادغام یافته مقاوم به تابش |
| عنوان انگلیسی مقاله: |
Dummy Gate-Assisted n-MOSFET Layout for a Radiation-Tolerant Integrated Circuit |
چکیده
1. مقدمه
2. ساختار N-MOSFET DGA ارائه شده
الف. شرح طرح
ب. ملاحظات طراحی طرح
ج. مشخصات ساختاری
د. سازگاری طرح
3. نتایج شبیه سازی
الف. ساختار با n-MOSFET معمولی
ب. ساختار n-MOSFET DGA ارائه شده
4. نتایج تجربی
5. نتیجه گیری
کلمات کلیدی :
Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n ...https://www.hindawi.com/journals/isrn/2014/145759/by MS Lee - 2014 - Cited by 1 - Related articlesOct 29, 2014 - According to a recent report [1], the dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout, ...Dummy Gate-Assisted n-MOSFET Layout for a Radiation-Tolerant ...adsabs.harvard.edu/abs/2013ITNS...60.3084LDummy Gate-Assisted n-MOSFET Layout for a Radiation-Tolerant Integrated Circuit. Authors: Lee, Min Su; Lee, Hee Chul. Publication: IEEE Transactions on ...Patent US8907380 - Radiation tolerant dummy gate-assisted n ...https://www.google.ch/patents/US8907380The DGA n-MOSFET layout of the present invention can properly operate in a radioactive environment by blocking leakage current paths that may be created by ...Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n ...www.readcube.com/articles/10.1155%2F2014%2F145759In order to acquire radiation-tolerant characteristics in integrated circuits, a dummy ... oxide semiconductor field effect transistor (DGA n-MOSFET) layout was adopted. ... The proposed aspect ratio model for the DGA n-MOSFET exhibits good ...