| عنوان فارسی مقاله: | توصیف دینامیک فاصله کوچک ( تله) رابط در ترانزیستور های آلی نازک لایه، به عنوان مسئول ایجاد هیسترزیس |
| عنوان انگلیسی مقاله: | Characterization of interface trap dynamics responsible for hysteresis in organic thin-film transistors |
چکیده
1.مقدمه
2. ساختار دستگاه و اندازه گیری های جامع گیت به صورت دو سویه
3. تعیین نرخ حبس بار
4. تعیین نرخ آزاد سازی بار
5. نتایج
کلمات کلیدی :
Fundamentals of Bias Temperature Instability in MOS Transistors: ... https://books.google.com/books?isbn=8132225082 Souvik Mahapatra - 2015 - Technology & Engineering Characterization Methods, Process and Materials Impact, DC and AC ... traps at or near the IL/High-K interface for PBTI stress compared to that at Si/IL ... The exact physical mechanism responsible for reduction in trap generation ... Although DCIV assessed generated traps for NBTI and PBTI have similar time dynamics and ... Impact and Origin of Interface States in MOS Capacitor with Monolayer ... https://www.nature.com › Scientific Reports › Articles › Article by P Xia - 2017 - Cited by 3 - Related articles Jan 13, 2017 - Although experimental demonstration of transistor characteristics show a ... For instance, sulfur vacancies are responsible for the defects in ME and CVD while .... It is worthy to note that the electron-occupied trap states are indicated ..... Kresse, G. & Hafner, J. Ab initio molecular dynamics for liquid metals . Characterization of individual interface traps with charge pumping ... aip.scitation.org/doi/abs/10.1063/1.116087 by NS Saks - 1996 - Cited by 43 - Related articles Charge pumping (CP) of individual interface traps has been studied in small field effect transistors. The amplitude of the CP current is found to be quantized in ...