| عنوان فارسی مقاله: | سوئیچ شکاف نواری فعال فوتونی مبتنی بر چاه چند کوانتومیGaInNAs |
| عنوان انگلیسی مقاله: |
Active Photonic Band-Gap Switch Based on GaInNAs Multiquantum Well |
چکیده
1. مقدمه
2. نظریه مختصر و اجمالی
3. ساختار فوتونی فعال شکاف باند
4. عملیات دستگاه فعال تحت کنترل جریان
5. تاثیر اشباع نوری
6. نتیجه گیری
کلمات کلیدی :
State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) ...https://books.google.com/books?isbn=1566777119A. G. Baca - 2009 - Compound semiconductorsPreviously, III-V material with bandgap less than 1eV was not possible to be realized ... to GaAs and have a small bandgap (1eV), using the GaInNAs material system. ... al.3 in 1999 as a potential GaAs-based material for near infrared applications. ... waveguide, photoconductive switch and heterojunction bipolar transistor.Material gain simulation of the GaInNAs/GaAs semiconductor optical ...www.sciencedirect.com/science/article/pii/S0030402616311020/pdf?md5...pid...of the band gap which leads to the increase of the material gain peak. ... SOAs in optical communications, switching and signal processing based on their high ...Dimitris Alexandropoulos - Google Scholar Citationsscholar.google.com/citations?user=4hmmqrEAAAAJ&hl=enUniversity of Patras - upatras.grGain, differential gain and linewidth enhancement factor of GaInNAs/GaAs strained ... Active Photonic Band-Gap Switch Based on GaInNAs Multiquantum Well.[PDF]Temperature Performance of GaInNAs-Based Photonic Crystal ...www.jpier.org/PIERM/pierm47/20.15092403.pdfby G Calo - 2016 - Related articlesDec 16, 2015 - Abstract—The temperature performances of GaInNAs-based semiconductor devices, for next ... for efficient active optical switches and modulators. ... photonic band gap (PBG), periodic structures can be exploited for the ...