| عنوان فارسی مقاله: |
توصیف دینامیک فاصله کوچک ( تله) رابط در ترانزیستور های آلی نازک لایه، به عنوان مسئول ایجاد هیسترزیس |
| عنوان انگلیسی مقاله: |
Characterization of interface trap dynamics responsible for hysteresis in organic thin-film transistors |
چکیده
1.مقدمه
2. ساختار دستگاه و اندازه گیری های جامع گیت به صورت دو سویه
3. تعیین نرخ حبس بار
4. تعیین نرخ آزاد سازی بار
5. نتایج
کلمات کلیدی :
Effects of interface states and near interface traps on the threshold ...avs.scitation.org/doi/full/10.1116/1.4967306by P Fiorenza - 2017 - Related articlesThis paper reports on the effects of interface states and near interface traps on the ... The transfer characteristics of the transistors acquired in an appropriate bias ... static and dynamic losses) and to the improvement of the device reliability.3. ..... Analogously to the GaN-MOS case, these trapping states are responsible for a ...Molecular Dynamics Characterization of Rutile-Anatase Interfaces ...pubs.acs.org/doi/abs/10.1021/jp0713211by NA Deskins - 2007 - Cited by 49 - Related articlesMay 27, 2007 - Molecular Dynamics Characterization of Rutile-Anatase Interfaces ... Location of Hole and Electron Traps on Nanocrystalline Anatase TiO2.Plasmonic Organic Solar Cells: Charge Generation and Recombinationhttps://books.google.com/books?isbn=9811020213Bo Wu, Nripan Mathews, Tze-Chien Sum - 2016 - ScienceThe carrier dynamics were investigated over the temporal regimes spanning that of ... essential validation of the findings from the electrical characterization techniques. The traps originated from the AgNPs are responsible for the increased ... Street RA, Schoendorf M. Interface state recombination in organic solar cells.The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2https://books.google.com/books?isbn=1489915885B.E. Deal, C.R. Helms - 2013 - ScienceThe hot electron dynamics and its impact on device degradation can be ... occurs at sields above 1.5 MV/cm and is responsible for the trap creation phenomena.[PDF]Mechanisms responsible for dynamic ON-resistance in GaN high ...www-mtl.mit.edu/~alamo/pdf/2012/RC-201%20paper.pdfby D Jin - Cited by 57 - Related articlesJun 7, 2012 - Keywords- dynamic ON-resistance, GaN, HEMT, border traps ... tunneling process and are most likely interface states at the AlN spacer/AlGaN barrier ... In our experiments, we have characterized industrially prototyped ...