| عنوان فارسی مقاله: | شبیه سازی سراسری حمل و نقل O همراه C در کوره صنعتی هدایت کننده انجماد برای شمش های سیلیکون: اثر پوشش بر رویه بوته |
| عنوان انگلیسی مقاله: |
Global simulation of coupled oxygen and carbon transport in an industrial directional solidification furnace for crystalline silicon ingots: Effect of crucible cover coating |
چکیده
1. مقدمه
2. راه اندازی آزمایشی
3. توضیحات مدل
3.1. مدل سراسری انتقال حرارت
3.2. مدل حمل و نقل اکسیژن و کربن باهم
4. نتایج و بحث
4.1. شبیه سازیها برای یک بوته با رویه گرافیتی بدون پوشش
4.2. اثر پوشش رویه بوته روی حمل و نقل O/C با هم
5. نتیجه گیری ها
کلمات کلیدی :
Photovoltaics for the 21st Century 5https://books.google.com/books?isbn=1566777828M. Tao - 2010 - Science... Kyushu University, Kasuga, Fukuoka 816-8580 JAPAN A global simulation of coupled oxygen and carbon transport in a unidirectional solidification furnace ...Control of the Gas Flow in an Industrial Directional Solidification ...https://www.hindawi.com/journals/ijp/2015/513639/by L Liu - 2015 - Cited by 5 - Related articlesJul 6, 2015 - Global simulations of coupled oxygen (O) and carbon (C) transport were carried out to predict the SiO and CO gases in the furnace as well as ...Control of impurities transport in an industrial directional solidification ...aip.scitation.org/doi/abs/10.1063/1.4816919by Q Yu - 2013 - Related articlesGlobal simulations including coupled oxygen and carbon transport in the furnace were carried out. It was found that the proposed designs have little effect on the ...Control of impurities transport in an industrial ... - AIP Publishingaip.scitation.org/doi/pdf/10.1063/1.4816919by Q Yu - 2013 - Related articlesoxygen (O) and carbon (C) concentrations in multi-crystalline silicon (mc-Si) ingots. Global simulations including coupled oxygen and carbon transport in the ...Global simulation of coupled carbon and oxygen transport in a ...www.cheric.org/research/tech/periodicals/view.php?seq=872755Translate this pageby B Gao - 2010 - Cited by 17 - Related articlesFor accurate prediction of carbon and oxygen impurities in a single crystal produced by the Czochralski method, global simulation of coupled oxygen and carbon ...modelling analysis of oxygen transport during czochralski growth of ...https://www.cambridge.org/.../div-class-title-modelling-analysis-of-oxygen-transport-dur...by YE Egorov - 1997 - Cited by 18 - Related articlesABSTRACT. Global model of oxygen transport in the melt and inert gas is proposed which is based on coupled two-dimensional stationary modeling of global heat transfer, laminar flow of inert ... There exists an increasing interest in numerical simulation of Czochralski growth of Si crystals (CZ) ... of carbon from the heaters.