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| عنوان فارسی مقاله: |
اثر جابجاشدگی شیار در طرح سلول های خورشیدی GaAs و InGaP/GaAs بر سیلیسیم با استفاده از تحلیل المان محدود |
| عنوان انگلیسی مقاله: |
Impact of Threading Dislocations on the Design of GaAs and InGaP/GaAs Solar Cells on Si Using Finite Element Analysis |
چکیده
مدل شبیه سازی
نتایج و تشریح مطالب
الف. سلول 1J GaAs روی سیلیسیم
ب. سلول 2J InGaP/GaAs روی سیلیسیم
ث. تطبیق جریان در سلول 2J InGaP/GaAs روی سیلیسیم
د. اثر بازترکیب سطحی بر سلول 2J InGaP/GaAs
نتیجه گیری
کلمات کلیدی:
Design of metamorphic dual-junction InGaP/GaAs solar cell on Si with ...ieeexplore.ieee.org/document/6318003/by N Jain - 2012 - Cited by 4 - Related articlesWe have investigated the impact of threading dislocation density on the performance of dual-junction (2J) n+/p InGaP/GaAs solar cells on Si. Using our ...Impact of Threading Dislocations on the Design of GaAs and InGaP ...https://www.researchgate.net/.../260578258_Impact_of_Threading_Dislocations_on_the...Impact of Threading Dislocations on the Design of GaAs and InGaP/GaAs Solar Cells on Si Using Finite Element Analysis on ResearchGate, the professional ...Design of metamorphic dual-junction InGaP/GaAs solar cell on Si with ...https://www.researchgate.net/.../261090433_Design_of_metamorphic_dual-junction_In...Design of metamorphic dual-junction InGaP/GaAs solar cell on Si with ... a novel 2J InGaP/GaAs cell design on Si at a threading dislocation density of 106 cm-2 ...[PDF]Single-junction InGaP/GaAs Solar Cells Grown on Si Substrates with ...www.adsel.ece.vt.edu/files/journal/20.pdfby SA Ringel - 2002 - Cited by 98 - Related articlesSingle junction InGaP/GaAs solar cells displaying high efficiency and record high ... ing a threading dislocation density of $8 Â 105 cmÀ2, 19–20% AM0 single- .... greater scrutiny to generate optimum device designs for GaAs on Si solar cells ...Single-junction InGaP/GaAs solar cells grown ... - Wiley Online Libraryonlinelibrary.wiley.com/doi/10.1002/pip.448/abstractby SA Ringel - 2002 - Cited by 98 - Related articlesAug 27, 2002 - Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe ... and maintaining a threading dislocation density of ∼8 × 105 cm−2, ...[PDF]Single junction InGaP/GaAs solar cells grown on Si substrates using ...https://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/20030000607.pdfby SA Ringel - 2002 - Related articlesIII-V solar cell structures, generates a high density of threading dislocations in III-V .... designs for GaAs on Si solar cells with the significant reduction in TDD.Design of Metamorphic Dual-Junction InGaP/GaAs Solar Cell on Si ...citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.718.5711by N Jain - Cited by 4 - Related articlesWe have investigated the impact of threading dislocation density on the performance of dual-junction (2J) n+/p InGaP/GaAs solar cells on Si. Using our ...SMART Technologies for Natural Resource Conservation and Sustainable ...https://books.google.com/books?isbn=9385926152Nilanjan Sengupta - 2016In order to design test structures for the novel growth method, we use an analytical ... the threading dislocations generated due to mismatch between GaAs and Si. ... of 2J InGaP/GaAs solar cell on Si substrate in close agreement with the ...